BS EN 60512-4-1-2003 电子设备用连接器.试验和测量.电压应力试验.试验4a.耐电压

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【英文标准名称】:SpecificationforPoly(VinylChloride)(PVC)GasketedSewerFittings
【原文标准名称】:带密封垫的聚氯乙烯(PVC)下水道管件规范
【标准号】:ANSI/ASTMF1336-2002
【标准状态】:作废
【国别】:美国
【发布日期】:2002
【实施或试行日期】:
【发布单位】:美国国家标准学会(ANSI)
【起草单位】:ANSI
【标准类型】:()
【标准水平】:()
【中文主题词】:
【英文主题词】:Buildingsealants;Polyvinylchloride;Sewers;Valves
【摘要】:
【中国标准分类号】:G33
【国际标准分类号】:23_040_45;23_040_80
【页数】:
【正文语种】:英语


【英文标准名称】:StandardGuideforNeutronIrradiationofUnbiasedElectronicComponents
【原文标准名称】:未加偏压的电子元件的中子照射标准指南
【标准号】:ASTMF1190-1999(2005)
【标准状态】:现行
【国别】:
【发布日期】:1999
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(Practice)
【标准水平】:()
【中文主题词】:辐照;电子设备及元件;电气工程
【英文主题词】:dosimetry;electroniccomponent;equivalentmonoenergeticneutronfluence;fastburstreactor(FBR);galliumarsenide;gammadose;gammaeffects;irradiation;neutronfluence;neutronflux;nickel;1MeVequivalentfluence;radiation;reactor;
【摘要】:Semiconductordevicesarepermanentlydamagedbyreactorspectrumneutrons.Theeffectofsuchdamageontheperformanceofanelectroniccomponentcanbedeterminedbymeasuringthecomponentelectricalcharacteristicsbeforeandafterexposuretofastneutronsintheneutronfluencerangeofinterest.Theresultingdatacanbeutilizedinthedesignofelectroniccircuitsthataretolerantofthedegradationexhibitedbythatcomponent.Thisguideprovidesamethodbywhichtheexposureofsiliconandgalliumarsenidesemiconductordevicestoneutronirradiationmaybeperformedinamannerthatisrepeatableandwhichwillallowcomparisontobemadeofdatatakenatdifferentfacilities.Forsemiconductorsotherthansiliconandgalliumarsenide,thisguideprovidesamethodthatcanimproveconsistencyinthemeasurementsandassurancethatdatafromvariousfacilitiescanbecomparedonthesameequivalencefluencescalewhentheapplicablevalidated1-MeVdamagefunctionsarecodifiedinNationalstandards.Intheabsenceofavalidated1-MeVdamagefunction,thenon-ionizingenergyloss(NIEL)asafunctionincidentneutronenergy,normalizedtotheNIELat1MeV,maybeusedasanapproximation.SeePracticeE722foradescriptionofthemethod.1.1Thisguidestrictlyappliesonlytotheexposureofunbiasedsilicon(SI)orgalliumarsenide(GaAs)semiconductorcomponents(integratedcircuits,transistors,anddiodes)toneutronradiationfromanuclearreactorsourcetodeterminethepermanentdamageinthecomponents.Validated1-MeVdamagefunctionscodifiedinNationalStandardsarenotcurrentlyavailableforothersemiconductormaterials.1.2Elementsofthisguidewiththedeviationsnotedmayalsobeapplicabletotheexposureofsemiconductorscomprisedofothermaterialsexceptthatvalidated1-MeVdamagefunctionscodifiedinNationalstandardsarenotcurrentlyavailable.1.3Onlytheconditionsofexposureareaddressedinthisguide.Theeffectsofradiationonthetestsampleshouldbedeterminedusingappropriateelectricaltestmethods.1.4Thisguideaddressesthoseissuesandconcernspertainingtoirradiationswithreactorspectrumneutrons.1.5Systemandsubsystemexposuresandtestmethodsarenotincludedinthisguide.1.6Thisguideisapplicabletoirradiationsconductedwiththereactoroperatingineitherthepulsedorsteady-statemode.Therangeofinterestforneutronfluenceindisplacementdamagesemiconductortestingrangefromapproximately109to1016n/cm2.1.7Thisguidedoesnotaddressneutron-inducedsingleormultipleneutroneventeffectsortransientannealing.1.8ThisguideprovidesanalternativetoTestMethod1017.3,NeutronDisplacementTesting,acomponentofMIL-STD-883andMIL-STD-750.TheDepartmentofDefensehasrestricteduseoftheseMIL-STDstoprogramsexistingin1995andearlier.Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:L10
【国际标准分类号】:31_020;31_080_01
【页数】:5P.;A4
【正文语种】: